Infrared sensors (IR-S) are devices use for imaging of various kind. IR-S are device that are made on two materials.
- Silicon read out circuit which uses CMOS technology
- HgCdTe
The HgCdTe material has a small energy gap << 1 eV so it is sensitive to IR radiation up to 10um. The material has to be cooled down to cryogenic temperature to operate properly
The final senor is made by wafer bumping the HgCdTe + CMOS. The sensor pixel operate like a diode in the standard CIS devices but in the pixel there is not electronic. The read out circuit is implemented in CMOS.
We have experience to design the CMOS read out circuit and we are familiar with the assembly.
Some CIS image sensor also uses this technology.
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